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　　報(bào)告題目：Research on Novel Two-Dimensional Semiconductors and Other Nanoelectronics
　　報(bào)告人：Prof. Qiliang Li，Dept. of Electrical and Computer Engineering, George Mason University
　　時(shí)間：2015年3月18日 15：00
　　地點(diǎn)：三牌樓校區(qū)科技樓 712
　　主辦單位：電子科學(xué)與工程學(xué)院、科技處
　　報(bào)告人簡(jiǎn)介：
　　Qiliang Li received Ph.D. (2004) in Electrical and Computer Engineering from North Carolina State University. He received M.S. (1999), Nanjing Univ., and B.S. (1996), Wuhan Univ., both in Physics. His doctoral research was in the area of hybrid silicon/molecular field effect transistors and memories. In Oct. 2004, he joined the Semiconductor Electronics Division of National Institute of Standards and Technology (NIST), Gaithersburg, MD, where he was a research scientist on the advanced CMOS and nanoelectronics materials and devices. In August 2007, he joined the Department of Electrical and Computer Engineering at George Mason University, Fairfax, Virginia as an Assistant Professor and was promoted to Associate Professor in 2012. He has published 70 journal papers. He received the honor of Distinguished Virginia Microelectronics Consortium Professorship in 2007. He received NSF CAREER award in 2009, Mason Emerging Researcher/Scholar/Creator Award in 2011, and School of Engineering Rising Star in 2012.